IBM chips at 32nm using High-K/Metal Gate Materials
As you might remember, Intel announced in 01/2007 a new technique for increasing conductivity and transistor isolation using high-k materials. This was curiously followed on the same day by a similar breakthrough announcement from IBM/AMD alliance. Intel is using the high-k technology to improve speed and lower power consumption in its 45nm chips now.
IBM, along with its manufacturing partners, has just demonstrated chips that it says show that high-k/metal gate technology down at typical dimensions of 32nm "can result in performance gains up to 30% and power savings up to 50%", compared to the 45nm process. IBM expects to be manufacturing 32nm systems by the end of 2009
See IBM Press Release.
Labels: nanoscience, physics, technology

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