Spin-torque nanomagnet switching breaks speed limits

Dynamic Static Random Access Memory (DRAM) and Static Random Access Memory (SRAM) require constant power in order to retain memory. Using a magnetic memory chip known as Magnetic Random Access Memory (MRAM), information can be stored in the form of magnetization. The newest generation of MRAM employs the spin-torque effect for programming the magnetic bits. By using a current pulse, the spin-torque can be controlled and the memory state of the cell can be programmed. An experiment performed at the Physikalisch-Technische Bundesanstalt (PTB) in Germany has uncovered that a spin-torque switching of a nanomagnet is as fast as what is permitted according to the fundamental laws of physics’ limit.

This method of switching, also named ballistic switching, could allow for increased speeds in future non-volatile magnetic memories.

See thefutureofthings.com.